IndiumV3, Main, Repository, bibRecord, 002723

Power Scaling of CW and Pulsed IR and mid-IR OPSLs

Identifieur interne : 002723 ( Main/Repository ); précédent : 002722; suivant : 002724

Power Scaling of CW and Pulsed IR and mid-IR OPSLs

Auteurs : RBID : Pascal:11-0365407

Descripteurs français

Pascal (Inist)
- Laser semiconducteur, Rayonnement IR moyen, Composé ternaire, Gallium Arséniure, Indium Arséniure, Laser émission surface, Laser cavité verticale, As Ga In, InGaAs, 0130C, 4255P, VCSEL.

English descriptors

KwdEn :
- Gallium Arsenides, Indium Arsenides, Mid infrared radiation, Semiconductor lasers, Surface emitting lasers, Ternary compounds, Vertical cavity laser.

Abstract

We present an overview of the quantum design, growth and lasing operation of both IR and mid-IR OPSL structures aimed at extracting multi-Watt powers CW and multi-kW peak power pulsed. Issues related to power scaling are identified and discussed. The IR OPSLs based on InGaAs QW bottom emitters targeted at wavelengths between 1015nm and 1040nm are operated in CW mode (yielding a maximum power of 64W) and pulsed (peak power of 245W). The mid-IR top emitter OPSLs designed to lase at 2μm are based on a novel lattice mismatched growth using InGaSb QWs and yield a maximum peak power of 350W pulsed.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002B95

Links to Exploration step

Pascal:11-0365407

Le document en format XML

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<author><name sortKey="Moloney, J V" uniqKey="Moloney J">J. V. Moloney</name>
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<author><name sortKey="Hader, J" uniqKey="Hader J">J. Hader</name>
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<author><name sortKey="Wang, T L" uniqKey="Wang T">T.-L. Wang</name>
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<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0365407 INIST</idno>
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<idno type="wicri:Area/Main/Corpus">002B95</idno>
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<seriesStmt><idno type="ISSN">0277-786X</idno>
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<term>Indium Arsenides</term>
<term>Mid infrared radiation</term>
<term>Semiconductor lasers</term>
<term>Surface emitting lasers</term>
<term>Ternary compounds</term>
<term>Vertical cavity laser</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term>
<term>Rayonnement IR moyen</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Laser émission surface</term>
<term>Laser cavité verticale</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>0130C</term>
<term>4255P</term>
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<front><div type="abstract" xml:lang="en">We present an overview of the quantum design, growth and lasing operation of both IR and mid-IR OPSL structures aimed at extracting multi-Watt powers CW and multi-kW peak power pulsed. Issues related to power scaling are identified and discussed. The IR OPSLs based on InGaAs QW bottom emitters targeted at wavelengths between 1015nm and 1040nm are operated in CW mode (yielding a maximum power of 64W) and pulsed (peak power of 245W). The mid-IR top emitter OPSLs designed to lase at 2μm are based on a novel lattice mismatched growth using InGaSb QWs and yield a maximum peak power of 350W pulsed.</div>
</front>
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<fA47 i1="01" i2="1"><s0>11-0365407</s0>
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<fC01 i1="01" l="ENG"><s0>We present an overview of the quantum design, growth and lasing operation of both IR and mid-IR OPSL structures aimed at extracting multi-Watt powers CW and multi-kW peak power pulsed. Issues related to power scaling are identified and discussed. The IR OPSLs based on InGaAs QW bottom emitters targeted at wavelengths between 1015nm and 1040nm are operated in CW mode (yielding a maximum power of 64W) and pulsed (peak power of 245W). The mid-IR top emitter OPSLs designed to lase at 2μm are based on a novel lattice mismatched growth using InGaSb QWs and yield a maximum peak power of 350W pulsed.</s0>
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<s5>52</s5>
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<s5>62</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>VCSEL</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fN21><s1>249</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Vertical external cavity surface emitting lasers</s1>
<s3>San Francisco CA USA</s3>
<s4>2011</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Power Scaling of CW and Pulsed IR and mid-IR OPSLs

Power Scaling of CW and Pulsed IR and mid-IR OPSLs

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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